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BBO Pockels Cells

BBO Pockels Cells

Pockels cell are used to change the polarization state of light passing through it when a voltage is applied to the electrodes of electro-optic crystals such as BBO.

from 1705 $
delivery Estimated delivery time: 4 - 5 days
Products
Specifications
Brochures
Description
Clear Aperture
Quarter Wave Voltage*
Central wavelength
Application
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BBO Pockels Cells for 1040 - 1070 nm range
Code Clear Aperture Quarter Wave Voltage* Central wavelength Application Price Delivery Add to cart
i PCB3S-C-1064 ø 2.5 mm <3.5 kV DC 1064 nm Nd host high power lasers 1705 $ 4 - 5 days
i PCB3D-C-1064 ø 2.5 mm <1.8 kV DC 1064 nm Nd host high power lasers 2662 $ 5 - 6 weeks
i PCB3S/25-C-1064 ø 2.5 mm <3.0 kV DC 1064 nm Nd host high power lasers 2195 $ 4 - 5 days
i PCB3D/25-C-1064 ø 2.5 mm <1.5 kV DC 1064 nm Nd host high power lasers 3630 $ 5 - 6 weeks
i PCB4S-C-1064 ø 3.5 mm <4.6 kV DC 1064 nm Nd host high power lasers 2189 $ Request
i PCB4D-C-1064 ø 3.5 mm <2.3 kV DC 1064 nm Nd host high power lasers 3586 $ Request
i PCB4Q-C-1064 ø 3.5 mm <2 x 1.3 kV DC 1064 nm Nd host high power lasers 6435 $ Request
i PCB6.3S-C-1064 ø 5.8 mm <7.5 kV DC 1064 nm Nd host high power lasers 4345 $ 4 - 5 days
i PCB6.3D-C-1064 ø 5.8 mm <3.8 kV DC 1064 nm Nd host high power lasers 8195 $ 4 - 5 days
BBO Pockels Cells for 1020-1040 nm range
Code Clear Aperture Quarter Wave Voltage* Central wavelength Application Price Delivery Add to cart
i PCB3S-C-1030 ø 2.5 mm <3.4 kV DC 1030 nm Yb host femtosecond lasers 1705 $ Request
i PCB3D-C-1030 ø 2.5 mm <1.7 kV DC 1030 nm Yb host femtosecond lasers 2662 $ 4 - 5 days
i PCB3S/25-C-1030 ø 2.5 mm <2.9 kV DC 1030 nm Yb host femtosecond lasers 2195 $ 4 - 5 days
i PCB3D/25-C-1030 ø 2.5 mm <1.4 kV DC 1030 nm Yb host femtosecond lasers 3630 $ 4 - 5 days
i PCB4S-C-1030 ø 3.5 mm <4.5 kV DC 1030 nm Yb host femtosecond lasers 2189 $ Request
i PCB4D-C-1030 ø 3.5 mm <2.2 kV DC 1030 nm Yb host femtosecond lasers 3586 $ 4 - 5 days
i PCB4Q-C-1030 ø 3.5 mm <2 x 1.2 kV DC 1030 nm Yb host femtosecond lasers 6435 $ Request
i PCB6.3S-C-1030 ø 5.8 mm <7.4 kV DC 1030 nm Yb host femtosecond lasers 4345 $ Request
i PCB6.3D-C-1030 ø 5.8 mm <3.75 kV DC 1030 nm Yb host femtosecond lasers 8195 $ Request
BBO Pockels Cells for 770-820 nm range
Code Clear Aperture Quarter Wave Voltage* Central wavelength Application Price Delivery Add to cart
i PCB3S-C-800 ø 2.5 mm <2.6 kV DC 800 nm Ti:Sapphire femtosecond lasers 1705 $ 4 - 5 days
i PCB3D-C-800 ø 2.5 mm <1.3 kV DC 800 nm Ti:Sapphire femtosecond lasers 2662 $ 4 - 5 days
i PCB4S-C-800 ø 3.5 mm <3.4 kV DC 800 nm Ti:Sapphire femtosecond lasers 2189 $ 4 - 5 days
i PCB4D-C-800 ø 3.5 mm <1.7 kV DC 800 nm Ti:Sapphire femtosecond lasers 3586 $ Request
i PCB4Q-C-800 ø 3.5 mm <2 x 0.9 kV DC 800 nm Ti:Sapphire femtosecond lasers 6435 $ Request
i PCB3S/25-C-800 ø 2.5 mm <2.1 kV DC 800 nm Ti:Sapphire femtosecond lasers 2195 $ Request
i PCB3D/25-C-800 ø 2.5 mm <1.1 kV DC 800 nm Ti:Sapphire femtosecond lasers 3630 $ Request
* Quarter wave voltage is calculated for DC Voltage at indicated central wavelength. Pulsed operation voltage is typicall up to 10% higher.
Above standard BBO Pockels cells have protective ceramic apertures with diameter equal to clear aperture of crystals. Ceramic apertures can be removed to have access to the full aperture of the electro-optical crystals.
Model PCB3S PCB3D PCB3S/25 PCB3D/25
Clear aperture diameter, mm 2.5 2.5 2.5 2.5
Crystal size (WxHxL), mm 3x3x20 3x3x20 3x3x25 3x3x25
Quantity of crystals 1 2 1 2
λ/4 voltage (@ 1064 nm), kV DC <3.5 <1.8 <3.0 <1.5
Capacitance, pF 4 6 4 6
Optical transmission, % >98 >98 >98 >98
Contrast ratio 1) >1:1000 >1:500 >1:1000 >1:500
Cell size, mm Ø25.4x37.2 Ø25.4x57.2 Ø25.4x42.2 Ø25.4x67.2

 

All crystals for the Pockels cells provided above are coated AR/AR@1064 nm. Other antireflection coatings are available under request. Damage threshold >5 J/cm2 for 10 ns pulses at 1064 nm.


Model PCB4S PCB4D PCB4Q-C
Clear aperture diameter, mm 3.5 3.5 3.5
Crystal size (WxHxL), mm 4x4x20 4x4x20 4x4x20
Quantity of crystals 1 2 4
λ/4 voltage (@ 1064 nm), kV DC <4.6 <2.3 < 2 x 1.3
Capacitance, pF 3 6 2×<6
Optical transmission, % >98 >98 >98
Contrast ratio 1) >1:1000 >1:500 >1:500
Cell size, mm Ø25.4x37.2 Ø25.4x57.2 Ø25.4x112

 

All crystals for the Pockels cells provided above are coated AR/AR@1064 nm. Other antireflection coatings are available under request. Damage threshold >5 J/cm2 for 10 ns pulses at 1064 nm.


Model PCB6.3S PCB6.3D PCB8D
Clear aperture diameter, mm 5.8 5.8 7.5
Crystal size (WxHxL), mm 6.3x6.3x20 6.3x6.3x20 8x8x20
Quantity of crystals 1 2 2
λ/4 voltage (@ 1064 nm), kV DC <7.5 <3,8 <4.6
Capacitance, pF 6 <8 <8
Optical transmission, % >98 >98 >98
Contrast ratio 1) >1:1000 >1:500 >1:500
Cell size, mm Ø35x42.2 Ø35x57.2 Ø35x64

 

All crystals for the Pockels cells provided above are coated AR/AR@1064 nm. Other antireflection coatings are available under request. Damage threshold >5 J/cm2 for 10 ns pulses at 1064 nm.


BBO Pockels Cells
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Features:

  • minimal piezoelectric ringing
  • low absorption
  • ceramic aperture is available
  • broad transmission range from 200 nm to 2000 nm
  • compact size

Applications:

  • high repetition rate DPSS Q-switch
  • high repetition rate regenerative amplifier control
  • cavity dumping
  • beam chopper

Pockels cell are used to change the polarization state of light passing through it when a voltage is applied to the electrodes of  electro-optic crystals such as BBO. When used in conjunction with polarizer, Pockels cells can be used as fast optical switches. Typical applications include Q-switching of the laser cavity, laser cavity dumping and coupling light into and from regenerative amplifiers.

 

BBO based Pockels cells can be useful at wavelengths from the UV to more than 2 μm. Low piezoelectric ringing makes these Pockels cells attractive for the control of high-power and high pulse repetition rate lasers. Fast switching electronic drivers properly matched to the cell are available for Q-switching, cavity dumping and other applications. Pockels cells of PCB series are transverse field devices. Low electro-optical coefficient of BBO results in high operating voltages. The quarter-wave voltage is proportional to the ratio of electrode spacing and crystal length. As a result, smaller aperture devices have lower quarter-wave, however even for 2.5 mm aperture devices the quarter-wave voltage is as high as 4 kV @ 1064 nm. Double crystal design is employed to reduce required voltages and to allow operation in half-wave mode with fast switching times.