Crystal | ZnGeP2 | AgGaSe2 | AgGaS2 | GaSe |
Crystal Symmetry | Tetragonal | Tetragonal | Tetragonal | Hexagonal |
Point Group | 42m | 42m | 42m | 62m |
Lattice Constants, Å a c |
5.465 10.771 |
5.9901 10.8823 |
5.757 10.305 |
3.742 15.918 |
Density, g/cm3 | 4.175 | 5.71 | 4.56 | 5.03 |
OPTICAL PROPERTIES
Crystal | ZnGeP2 | AgGaSe2 | AgGaS2 | GaSe |
Optical transmission, µm | 0.74–12 | 0.73–18 | 0.53–12 | 0.65–18 |
Indices of Refraction at | ||||
1.06 µm no ne |
3.2324 3.2786 |
2.7005 2.6759 |
2.4508 2.3966 |
2.9082 2.5676 |
5.3 µm no ne |
3.1141 3.1524 |
2.6140 2.5823 |
2.3954 2.3421 |
2.8340 2.4599 |
10.6 µm no ne |
3.0725 3.1119 |
2.5915 2.5585 |
2.3466 2.2924 |
2.8158 2.4392 |
Absorption Coefficient, cm-1 at | ||||
1.06 µm | 3.0 | <0.02 | <0.09 | 0.25 |
2.5 µm | 0.03 | <0.01 | 0.01 | 0.05 |
5.0 µm | 0.02 | <0.01 | 0.01 | 0.05 |
7.5 µm | 0.02 | - | 0.02 | 0.05 |
10.0 µm | 0.4 | - | <0.6 | 0.05 |
11.0 µm | 0.8 |
NONLINEAR OPTICAL PROPERTIES
Crystal | ZnGeP2 | AgGaSe2 | AgGaS2 | GaSe |
Laser damage threshold, MW/cm² | 60 | 25 | 10 | 28 |
at pulse duration, ns | 100 | 50 | 20 | 150 |
at wavelength, µm | 10.6 | 2.05 | 1.06 | 9.3 |
Nonlinearity, pm/V | 111 | 43 | 31 | 63 |
Phase matching angle for Type 1 SHG at 10.6 µm, deg | 76 | 55 | 67 | 14 |
Walk-off angle at 5.3 µm, deg | 0.57 | 0.67 | 0.85 | 3.4 |
THERMAL PROPERTIES
Crystal | ZnGeP2 | AgGaSe2 | AgGaS2 | GaSe |
Melting point, °C | 1298 | 851 | 998 | 1233 |
Thermal Expansion Coefficient, 10-6/°K | ||||
? | 17.5(a) | 23.4(c) | 12.5 | 9.0 |
? | 9.1(b) | 18.0(d) | ||
|| | 1.59(a) | -6.4(c) | -13.2 | 8.25 |
|| | 8.08(b) | -16.0(d) |
a) at 293-573 K, b) at 573-873 K, c) at 298-423 K, d) 423-873 K
SELLMEIER EQUATIONS FOR CALCULATION OF INDICES OF REFRACTION
Crystal | A | B |
C |
D |
E | F | Expression | |
ZnGeP2 | no ne |
8.0409 8.0929 |
1.68625 1.8649 |
0.40824 0.41468 |
1.2880 0.84052 |
611.05 452.05 |
- | n2 = A + B λ2 / ( λ2 – C) + D λ2 / ( λ2 – E ) |
AgGaSe2 | no ne |
6.8507 6.6792 |
0.4297 0.4598 |
0.15840 0.21220 |
0.00125 0.00126 |
- | - | n2 = A + B / ( λ2 – C) – D λ2 |
AgGaS2 | no ne |
3.3970 3.5873 |
2.3982 1.9533 |
0.09311 0.11066 |
2.1640 2.3391 |
950.0 1030.7 |
- | n2 = A + B / (1 – C / λ2) + D / (1 – E / λ2) |
GaSe | no ne |
7.443 5.76 |
0.405 0.3879 |
0.0186 -0.2288 |
0.0061 0.1223 |
3.1485 1.855 |
2194 1780 |
n2 = A + B/ λ2 + C/?4 + D/λ6 + E/(1 – F/ λ2) |
EKSMA Optics Infrared AGS, AGSe, GaSe, ZGP Crystals
200.53 kB |
Due to their unique features, optical nonlinear IR crystals like ZnGeP2 (ZGP), AgGaSe2, AgGaS2 (AGS), GaSe have gained tremendous interest for the middle and deep infrared applications. The IR crystals have large effective optical nonlinearity, wide spectral and angular acceptance, broad transparency range, non-critical requirements for temperature stabilization and vibration control, and are easy to mechanically process (except for GaSe).
ZGP crystals have transmission band edges at 0.74 and 12 µm. However their useful transmission range is from 1.9 to 8.6 µm and from 9.6 to 10.2 µm. These crystals have the largest nonlinear optical coefficient and relatively high laser damage threshold. ZGP crystals can successfully be used in diverse applications:
• up-conversion of CO2 and CO laser radiation to near IR range via harmonics generation and mixing processes;
• efficient SHG of pulsed CO, CO2 and chemical DF-laser;
• efficient down conversion of Holmium, Thulium and Erbium laser wavelengths to mid infrared wavelength ranges by OPO process.
We offer ZGP crystals with high damage threshold BBAR coatings and the lowest absorption coefficient α < 0.05 cm-1 (at pump wavelengths 2.05 - 2.1 µm „o“- polarisation) for OPO applications.
Typical absorption coefficient is <0.03 cm-1 at 2.5 - 8.2 µm range.
AgGaSe2 crystals have band edges at 0.73 and 18 µm. Its useful transmission range (0.9–16 µm) and wide phase matching capability provide excellent potential for OPO applications when pumped by a variety of different lasers. Tuning within 2.5–12 µm has been obtained when pumping by Ho:YLF laser at 2.05 µm; as well as non-critical phase matching (NCPM) operation within 1.9–5.5 µm when pumping at 1.4–1.55 µm. AgGaSe2 (AgGaSe) has been demonstrated to be an efficient frequency doubling crystal for infrared CO2 lasers radiation.
is transparent from 0.53 to 12 µm. Although its nonlinear optical coefficient is the lowest among the above mentioned infrared crystals, high short wavelength transparency edging at 550 nm is made use of in OPOs pumped by Nd:YAG laser; in numerous difference frequency mixing experiments with diode, Ti:Sapphire, Nd:YAG and IR dye lasers covering 3–12 µm range; in direct infrared countermeasure systems, and for SHG of CO2 laser. Thin AgGaS2 (AGS) crystal plates are popular for ultrashort pulse generation in mid IR range by difference frequency generation employing NIR wavelength pulses.
has band edges at 0.65 and 18 µm. GaSe has been successfully used for efficient SHG of CO2 laser; SHG of pulsed CO, CO2 and chemical DF-laser (λ = 2.36 µm) radiation; up conversion of CO and CO2 laser radiation into the visible range; infrared pulses generation via difference frequency mixing of neodymium and infrared dye laser or (F-)-centre laser pulses; OPG light generation within 3.5–18 µm. Thin GaSe crystal plates are also used for fsec THz generation. It is impossible to cut the crystals for certain phase matching angles because of material structure (cleave along (001) plane), what limits the application