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Infrared Nonlinear AgGaS2, AgGaSe2, GaSe, ZnGeP2 Crystals

Infrared Nonlinear AgGaS2, AgGaSe2, GaSe, ZnGeP2 Crystals

Due to their unique features, optical nonlinear IR crystals like ZnGeP2, AgGaSe2, AgGaS2, GaSe have gained tremendous interest for the middle and deep infrared applications. The IR crystals have large effective optical nonlinearity.

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delivery Estimated delivery time: 4 - 5 days
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Description
ZnGeP2 (ZGP) Crystals
Application - OPO @ 2.1-> 3.5-5 µm
Code Size θ φ Coating Mounted Notes Price Delivery Add to cart
ZGP-401 7 x 5 x 15 mm 54° AR @ 2.1µm+BBAR@3.5-5µm No - Request Request
ZGP-58-5310 5 x 3 x 10 mm 58° AR @ 2.1µm+BBAR@3.5-5µm No Last piece available! 5863 $ Request
AgGaS2 (AGS) Crystals
Application - DFG @ 1.2-2.4 μm -> 2.4-11 μm
Code Size θ φ Coating Mounted Notes Price Delivery Add to cart
AGS-401H 5 x 5 x 1 mm 39° 45° BBAR/BBAR @ 1.1-2.6 / 2.6-11 μm Yes, ø25.4 mm Type 1 1947 $ 4 - 5 days
AGS-402H 6 x 6 x 2 mm 50° BBAR/BBAR @ 1.1-2.6 / 2.6-11 μm Yes, ø25.4 mm Type 2 2613 $ Request
AGS-404H 5 x 5 x 0.4 mm 39° 45° BBAR/BBAR @ 1.1-2.6 / 2.6-11 μm Yes, ø25.4 mm Type 1 2244 $ 4 - 5 days
AGS-801H 8 x 8 x 0.4 mm 39° 45° BBAR/BBAR @ 1.1-2.6 / 2.6-11 μm Yes, ø25.4 mm Type 1 4488 $ 4 - 5 days
AGS-802H 8 x 8 x 1 mm 39° 45° BBAR/BBAR @ 1.1-2.6 / 2.6-11 μm Yes, ø25.4 mm Type 1 4037 $ Request
Application - SHG @ 3-6 μm
Code Size θ φ Coating Mounted Notes Price Delivery Add to cart
AGS-403H 5 x 5 x 0.4 mm 34° 45° BBAR/BBAR @ 3-6 / 1.5-3 μm Yes, ø25.4 mm Type 1 2244 $ Request
GaSe Crystals
Code Size θ φ Coating Mounted Notes Price Delivery Add to cart
GaSe-10H1 ø7 x 0.01 mm Z cut - uncoated Yes, ø25.4 mm - 2992 $ 4 - 5 days
GaSe-30H1 ø7 x 0.03 mm Z cut - uncoated Yes, ø25.4 mm - 2668 $ 4 - 5 days
GaSe-100H1 ø7 x 0.1 mm Z cut - uncoated Yes, ø25.4 mm - 2508 $ 4 - 5 days
GaSe-500H1 ø7 x 0.5 mm Z cut - uncoated Yes, ø25.4 mm - 2101 $ 4 - 5 days
GaSe-1000H1 ø7 x 1 mm Z cut - uncoated Yes, ø25.4 mm - 2651 $ 4 - 5 days
GaSe-2000H1 ø7 x 2 mm Z cut - uncoated Yes, ø25.4 mm - 2921 $ 4 - 5 days
Crystal ZnGeP2  AgGaSe2 AgGaS2 GaSe
Crystal Symmetry Tetragonal Tetragonal Tetragonal Hexagonal
Point Group 42m 42m 42m 62m
Lattice Constants, Å       a
                                            c
5.465
10.771
5.9901
10.8823
5.757
10.305
3.742
15.918
Density, g/cm3 4.175 5.71 4.56 5.03

 

OPTICAL PROPERTIES

Crystal ZnGeP2 AgGaSe2 AgGaS2 GaSe
Optical transmission, µm  0.74–12 0.73–18  0.53–12 0.65–18
Indices of Refraction at    
 1.06 µm      no
                      ne
3.2324
3.2786
2.7005
2.6759
2.4508
2.3966
2.9082
2.5676
 5.3 µm        no
                      ne
3.1141
3.1524
2.6140
2.5823
2.3954
2.3421
2.8340
2.4599
 10.6 µm      no
                      ne
3.0725
3.1119
2.5915
2.5585
2.3466
2.2924
2.8158
2.4392
Absorption Coefficient, cm-1 at    
1.06 µm 3.0 <0.02 <0.09 0.25
2.5 µm 0.03 <0.01 0.01 0.05
5.0 µm 0.02 <0.01 0.01 0.05
7.5 µm 0.02  - 0.02 0.05
10.0 µm 0.4  - <0.6 0.05
11.0 µm 0.8      

 

NONLINEAR OPTICAL PROPERTIES

Crystal ZnGeP2 AgGaSe2 AgGaS2 GaSe
Laser damage threshold, MW/cm² 60 25 10 28
     at pulse duration, ns 100 50 20 150
     at wavelength, µm 10.6 2.05 1.06 9.3
Nonlinearity, pm/V 111 43 31 63
Phase matching angle for Type 1 SHG at 10.6 µm, deg 76 55 67 14
Walk-off angle at 5.3 µm, deg 0.57 0.67 0.85 3.4

 

THERMAL PROPERTIES

Crystal ZnGeP2 AgGaSe2 AgGaS2 GaSe
Melting point, °C 1298 851 998 1233
Thermal Expansion Coefficient, 10-6/°K    
                                                                    ? 17.5(a) 23.4(c) 12.5 9.0
                                                                    ? 9.1(b) 18.0(d)    
                                                                    || 1.59(a) -6.4(c) -13.2 8.25
                                                                    || 8.08(b) -16.0(d)    

a) at 293-573 K, b) at 573-873 K, c) at 298-423 K, d) 423-873 K
 

SELLMEIER EQUATIONS FOR CALCULATION OF INDICES OF REFRACTION

Crystal   A B
C
D
 E F Expression
 ZnGeP2 no
ne
8.0409
8.0929
1.68625
1.8649
0.40824
0.41468
1.2880
0.84052
611.05
452.05
- n2 = A + B λ2 / ( λ2 – C) + D λ2 / ( λ2 – E )
 AgGaSe2 no
n
6.8507
6.6792
0.4297
0.4598
0.15840
0.21220
0.00125
0.00126
 - - n2 = A + B / ( λ2 – C) – D λ2
 AgGaS2 no
ne
3.3970
3.5873
2.3982
1.9533
0.09311
0.11066
2.1640
2.3391
 950.0
1030.7
- n2 = A + B / (1 – C / λ2) + D / (1 – E / λ2)
 GaSe no
n
7.443
5.76
0.405
0.3879
0.0186
-0.2288
 0.0061
0.1223
3.1485
1.855
2194
1780
n2 = A + B/ λ2 + C/?4 + D/λ6 + E/(1 – F/ λ2)
EKSMA Optics Infrared AGS, AGSe, GaSe, ZGP Crystals
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Due to their unique features, optical nonlinear IR crystals like ZnGeP2 (ZGP), AgGaSe2, AgGaS2 (AGS), GaSe have gained tremendous interest for the middle and deep infrared applications. The IR crystals have large effective optical nonlinearity, wide spectral and angular acceptance, broad transparency range, non-critical requirements for temperature stabilization and vibration control, and are easy to mechanically process (except for GaSe).

 

Infrared ZnGeP2 (ZGP) Crystal

ZGP crystals have transmission band edges at 0.74 and 12 µm. However their useful transmission range is from 1.9 to 8.6 µm and from 9.6 to 10.2 µm. These crystals have the largest nonlinear optical coefficient and relatively high laser damage threshold. ZGP crystals can successfully be used in diverse applications: 

•    up-conversion of CO2 and CO laser radiation to near IR range via harmonics generation and mixing processes; 

•    efficient SHG of pulsed CO, CO2 and chemical DF-laser; 

•    efficient down conversion of Holmium, Thulium and Erbium laser wavelengths to mid infrared wavelength ranges by OPO process.

 

We offer ZGP crystals with high damage threshold BBAR coatings and the lowest absorption coefficient α < 0.05 cm-1 (at pump wavelengths 2.05 - 2.1 µm „o“- polarisation) for OPO applications. 

Typical absorption coefficient is <0.03 cm-1 at 2.5 - 8.2 µm range.

 

Infrared AgGaSe2 Crystal

AgGaSe2 crystals have band edges at 0.73 and 18 µm. Its useful transmission range (0.9–16 µm) and wide phase matching capability provide excellent potential for OPO applications when pumped by a variety of different lasers. Tuning within 2.5–12 µm has been obtained when pumping by Ho:YLF laser at 2.05 µm; as well as non-critical phase matching (NCPM) operation within 1.9–5.5 µm  when pumping at 1.4–1.55 µm. AgGaSe2 (AgGaSe) has been demonstrated to be an efficient frequency doubling crystal for infrared CO2 lasers radiation.

 

IR crystal AgGaS2 (AGS)

is transparent from 0.53 to 12 µm. Although its nonlinear optical coefficient is the lowest among the above mentioned infrared crystals, high short wavelength transparency edging at 550 nm is made use of in OPOs pumped by Nd:YAG laser; in numerous difference frequency mixing experiments with diode, Ti:Sapphire, Nd:YAG and IR dye lasers covering 3–12 µm range; in direct infrared countermeasure systems, and for SHG of CO2 laser. Thin AgGaS2 (AGS) crystal plates are popular for ultrashort pulse generation in mid IR range by difference frequency generation employing NIR wavelength pulses.

 

IR crystal GaSe (Gallium Selenide)

has band edges at 0.65 and 18 µm. GaSe has been successfully used for efficient SHG of CO2 laser; SHG of pulsed CO, CO2 and chemical DF-laser (λ = 2.36 µm) radiation; up conversion of CO and CO2 laser radiation into the visible range; infrared pulses generation via difference frequency mixing of neodymium and infrared dye laser or (F-)-centre laser pulses; OPG light generation within 3.5–18 µm. Thin GaSe crystal plates are also used for fsec THz generation. It is impossible to cut the crystals for certain phase matching angles because of material structure (cleave along (001) plane), what limits the application