|Maximum high voltage (HV) pulse amplitude||4.0 kV|
|HV pulse rise time||< 7 ns|
|HV pulse fall time||~2 µs 1)|
|HV pulse duration||180 ns 1)|
|Maximum HV pulse repetition rate||100 kHz|
|HV pulse jitter||< 0.5 ns|
|External triggering pulse duration requirement||100 - 1000 ns|
|External triggering pulse amplitude requirement||3-5 V (50 Ω)|
|External triggering pulse rise & fall time||< 10 ns|
|HV pulse delay||35–40 ns|
|External powering requirements:
high voltage supply
low voltage DC supply
0–4.0 kV, 9 mA max 2)
9–24 V, 500 mA max 2)
|Operating temperature||0–35 °C 3)|
|Size||104 × 52 × 25 mm|
1) Typical value;
2) Test conditions: PRR=100 kHz, C=6 pF, U=4 kV;
3) Heat sink temperature must not exceed 35 °C (95 °F) in all regimes of operation.
DQ Series high repetition rate Pockels cell driver has been designed for use in mode-locked lasers for cavity dumping or for cavity Q-switching of solid-state nanosecond lasers. Fast HV (less than 7 ns) edge ensures excellent pre- and post-pulse contrast.
Ability to operate at high pulse repetition rates makes this driver perfect fit for most of diode-pumped nanosecond lasers. For pulse repetition rates up to 10 kHz heatsink is not required. For high repetition rates the driver should be attached to the heatsink with thermal resistance of at least 0.4 °C/W for room temperature (25 °C) operation.
Pockels cell driver should be mounted into dielectric box (not provided) providing electrical insulation. Low voltage power supply is required to internal triggering circuit, while tuning of HV power supply voltage.